11 Search Results

Here, reactive sputter deposited tungsten and molybdenum oxide (WO_x, MoO_x) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films deposited by thermalmore » evaporation, these results demonstrate a good starting point for further optimizations of sputtered WO_x and MoO_x towards higher work functions to improve the hole selectivity.« less

Here, the applicability of atomic-layer-deposited titanium oxide (TiO_x) thin films for the formation of carrier selective contacts to crystalline silicon (c-Si) is investigated. While relatively good electron selectivity was presented recently by other groups, we show that carrier selectivity can be engineered from electron to hole selective depending on the deposition conditions, post deposition annealing and the contact material covering the TiOx layer. For both the electron and hole contacts, an open-circuit voltage (Voc) of ~ >650 mV is obtained. The fact that the Voc is correlated with the (asymmetric) induced c-Si band bending suggests that carrier selectivity is mainlymore » governed by the effective work function and/or the fixed charge rather than by the asymmetric band offsets at the Si/TiOx interface, which provides important insight into the basic function of metal-oxide-based contact systems.« less

The charge carrier transport mechanism of passivating contacts which feature an ultra-thin oxide layer is investigated by studying temperature-dependent current-voltage characteristics. 4-Terminal dark J-V measurements at low temperatures reveal non-linear J-V characteristics of passivating contacts with a homogeneously grown silicon oxide, which result in an exponential increase in contact resistance towards lower temperature. The attempt to describe the R(T) characteristic solely by thermionic emission of charge carriers across an energy barrier leads to a significant underestimation of the resistance by several orders of magnitude. However, the data can be described properly with the metal-insulator-semiconductor (MIS) theory if tunneling of chargemore » carriers through the silicon oxide layer is taken into account. Furthermore, temperature-dependent light J-V characteristics of solar cells featuring passivating contacts at the rear revealed a FF drop at T < 205 K, which is near the onset temperature of the exponential increase in contact resistivity.« less

This paper reports on in-depth understanding, modeling, and fabrication of 23.8% efficient 4 cm² n-type Float Zone (FZ) silicon cells with a selective boron emitter and photolithography contact on front and tunnel oxide passivating contact on the back. Tunnel oxide passivating contact composed of a very thin chemically grown silicon oxide (~15 Å) capped with plasma-enhanced chemical vapor deposition (PECVD) grown 20 nm n + poly Si gave excellent surface passivation and carrier selectivity with very low saturation current density (~5 fA/cm²). A high-quality boron selective emitter was formed using ion implantation and solid source diffusion to minimize metal recombinationmore » and emitter saturation current density. Process optimization resulted in a cell V_oc of 712 mV, J_sc of 41.2 mA/cm², and FF of 0.811. Here, a simple methodology is used to model these cells which replaces tunnel oxide passivating contact region by electron and hole recombination velocities extracted from measured saturation current density of tunnel oxide passivating contact region and analysis. Using this approach and two-dimensional device modeling gave an excellent match between the measured and simulated cell parameters and efficiency, supporting excellent passivation and carrier selectivity of these contacts. Extended simulations showed that 26% cell efficiency can be achieved with this cell structure by further optimization of wafer quality, emitter profile, and contact design« less

Silicon-based tandem solar cells can overcome the efficiency limit of single junction silicon solar cells. Perovskite solar cells are particularly promising as a top cell in monolithic tandem devices due to their rapid development towards high efficiencies, a tunable band gap with a sharp optical absorption edge and a simple production process. In monolithic tandem devices, the perovskite solar cell is deposited directly on the silicon cell, requiring low-temperature processes (< 200 °C) to maintain functionality of under-lying layers of the silicon cell in case of highly efficient silicon hetero-junction (SHJ) bottom solar cell. In this work, we present amore » complete low-temperature process for perovskite solar cells including a mesoporous titanium oxide (TiO₂) scaffold - a structure yielding the highest efficiencies for single-junction perovskite solar cells. We show that evaporation of the compact TiO₂ hole blocking layer and ultra-violet (UV) curing for the mesoporous TiO₂ layer allows for good performance, comparable to high-temperature (> 500 °C) processes. With both manufacturing routes, we obtain short-circuit current densities (J_SC) of about 20 mA/cm², open-circuit voltages (V_OC) over 1 V, fill factors (FF) between 0.7 and 0.8 and efficiencies (n) of more than 15%. We further show that the evaporated TiO₂ layer is suitable for the application in tandem devices. The series resistance of the layer itself and the contact resistance to an indium doped tin oxide (ITO) interconnection layer between the two sub-cells are low. Additionally, the low parasitic absorption for wavelengths above the perovskite band gap allow a higher absorption in the silicon bottom solar cell, which is essential to achieve high tandem efficiencies.« less

Carrier selective passivated contacts composed of thin oxide, n + polycrystalline Si and metal on top of a n-Si absorber can significantly lower the recombination current density (J_orear ≤8 fA/cm²) under the contact while providing excellent specific contact resistance (5–10 mΩ-cm²); 25.1% efficient small area cells with photolithography front contacts on boron doped selective emitter and Fz wafers have been achieved by Fraunhofer ISE using their tunnel oxide passivated contact (TOPCon) approach. This paper shows a methodology to model such passivated contact cells using Sentaurus device model, which involves replacing the TOPCon region by carrier selective electron and hole recombinationmore » velocities to match the measured J_orear of the TOPCon region as well as all the light IV values of the cell. We first validated the methodology by modeling a 24.9% reference cell. The model was then extended to assess the efficiency potential of large area TOPCon cells on commercial grade n-type Cz material with screen-printed front contacts. To use realistic input parameters, a 21% n-type PERT cell was fabricated on Cz wafer (5 Ω-cm, 1.5-ms lifetime). Modeling showed that the cell efficiency will improve to only 21.6% if the back of this cell is replaced by the above TOPCon, and the performance is limited by the homogenous emitter. Efficiency was then modeled to improve to 22.6% with the implementation of selective emitter (150/20 Ω/sq). Lastly, it is shown that screen printing of 40-µm-wide lines and improved bulk material (10 Ω-cm, 3-ms lifetime) can raise the single side TOPCon Cz cell efficiency to 23.2%.« less

Simple diffuse rear reflectors can enhance the light path length of weakly absorbed near infrared light in silicon solar cells and set a benchmark for more complex and expensive light trapping structures like dielectric gratings or plasmonic particles. We analyzed such simple diffuse rear reflectors systematically by optical and electrical measurements. We applied white paint, TiO₂ nanoparticles, white backsheets and a silver mirror to bifacial silicon solar cells and measured the enhancement of the external quantum efficiency for three different solar cell geometries: planar front and rear side, textured front and planar rear side, and textured front and rear side.more » We showed that an air-gap between the solar cell and the reflector decreases the absorption enhancement significantly, thus white paint and TiO₂ nanoparticles directly applied to the rear cell surface lead to the highest short circuit current density enhancements. Here, the short circuit current density gains for a 200 um thick planar solar cell reached up to 1.8 mA/cm², compared to a non-reflecting black rear side and up to 0.8 mA/cm² compared to a high-quality silver mirror rear side. For solar cells with textured front side the short circuit current density gains are in the range between 0.5 and 1.0 mA/cm² compared to a non-reflecting black rear side and do not significantly depend on the angular characteristic of the rear side reflector but mainly on its absolute reflectance.« less

In this work, boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr₃ furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigatedmore » in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the $$n$$-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr3 diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr₃ diffusion« less